features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems SGA5586Z dc to 4000mhz, cascadable sige hbt mmic amplifier the SGA5586Z is a high performance sige hbt mmic amplifier. a darling- ton configuration featuring one-micron emitters provides high f t and excellent thermal performance. the heterojunction increases breakdown voltage and minimizes leakage current between junctions. cancellation of emitter junction non-linearities result s in higher suppre ssion of intermodu- lation products. only two dc-blockin g capacitors, a bias resistor, and an optional rf choke are required for operation. 0 6 12 18 24 0123456 frequency (ghz) gain (db) -40 -30 -20 -10 0 return loss (db) gain irl orl gain & return loss vs. frequency v d = 3.3 v, i d = 60 ma (typ.) ? high gain: 18.7db at 1950mhz ? cascadable 50 ? operates from single supply ? low thermal resistance package applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? if amplifier ? wireless data, satellite ds100916 ? package: sot-86 SGA5586Zdc to 4000mhz, cascadable sige hbt mmic ampli- fier parameter specification unit condition min. typ. max. small signal gain 23.1 db 850mhz 18.7 db 1950mhz 17.3 db 2400 mhz output power at 1db compression 18.1 dbm 850mhz 15.8 dbm 1950mhz output third intercept point 31.6 dbm 850mhz 28.8 dbm 1950mhz bandwidth determined by return loss 4000 mhz >10db input return loss 12.2 db 1950mhz output return loss 20.7 db 1950mhz noise figure 2.6 db 1950mhz device operating voltage 3.5 3.9 4.2 v device operating current 54 60 66 ma thermal resistance (junction - lead) 97 c/w test conditions: v s =8v, i d =60ma typ., oip 3 tone spacing=1mhz, p out per tone=0dbm, r bias =68 , t l =25c, z s =z l =50
2 of 6 ds100916 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA5586Z typical performance at key operating frequencies absolute maximum ratings parameter rating unit max device current (i d ) 120 ma max device voltage (v d )6v max rf input power +16 dbm max junction temp (t j )+150c operating temp range (t l ) -40 to +85 c max storage temp +150 c operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter unit 100 mhz 500 mhz 850 mhz 1950 mhz 2400 mhz 3500 mhz small signal gain db 26.0 24.7 23.1 18.7 17.3 14.8 output third order intercept point dbm 31.5 31.6 28.8 27.1 output power at 1db compression dbm 18.3 18.1 15.8 14.4 input return loss db 22.3 13.9 11.8 12.2 12.3 10.6 output return loss db 19.8 18.6 18.8 20.7 17.5 14.2 reve r s e i s o l a t i o n d b 27. 7 27. 4 27. 0 2 3 . 4 21. 5 17. 5 noise figure db 2.5 2.5 2.6 3.0 test conditions: v s =8v, i d =60ma typ., oip 3 tone spacing=1mhz, p out per tone=0dbm, r bias =75 , t l =25c, z s =z l =50 caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. oip 3 vs. frequency v d = 3.9 v, i d = 60 ma p 1db vs. frequency v d = 3.9 v, i d = 60 ma 15 20 25 30 35 00.511.522.53 frequency (ghz) oip 3 (dbm) 10 12 14 16 18 20 00.511.522.53 frequency (ghz) p 1db (dbm) t l =+25oc t l =+25oc noise figure vs. frequency v d = 3.9 v, i d = 60 ma 0 1 2 3 4 5 00.511.522.53 frequency (ghz) noise figure (db) t l =+25oc
3 of 6 ds100916 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA5586Z -30 -25 -20 -15 -10 012345 frequency (ghz) s 12 (db) +25c -40c +85c 0 8 16 24 32 012345 frequency (ghz) s 21 (db) +25c -40c +85c -40 -30 -20 -10 0 012345 frequency (ghz) s 22 (db) +25c -40c +85c t l t l t l -40 -30 -20 -10 0 012345 frequency (ghz) s 11 (db) +25c -40c +85c t l | s 12 | vs. frequency v d = 3.9 v, i d = 60 ma (typ.) | s 22 | vs. frequency v d = 3.9 v, i d = 60 ma (typ.) | s 11 | vs. frequency v d = 3.9 v, i d = 60 ma (typ.) | s 21 | vs. frequency v d = 3.9 v, i d = 60 ma (typ.)
4 of 6 ds100916 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA5586Z application schematic evaluation board layout pin function description 1rf in rf input pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of operation. 2, 4 gnd connection to ground. for optimum rf performance, use via holes as close to ground leads as possible to reduce lead inductance. 3rf out/bias rf output and bias pin. dc voltage is present on this pin, therefore a dc blocking capacitor is necessary for proper oper- ation. e c n e r e f e r r o t a n g i s e d ) z h m ( y c n e u q e r f 0 0 5 0 5 8 0 5 9 1 0 0 4 2 0 0 5 3 c b f p 0 2 2f p 0 0 1f p 8 6f p 6 5f p 9 3 c d f p 0 0 1f p 8 6f p 2 2f p 2 2f p 5 1 l c h n 8 6h n 3 3h n 2 2h n 8 1h n 5 1 i r o f s e u l a v r o t s i s e r s a i b d e d n e m m o c e r d a m 0 6 = r s a i b v ( = s v - d i / ) d v ( e g a t l o v y l p p u s s )v 6v 8v 0 1v 2 1 r s a i b 6 38 60 0 10 3 1 r : e t o n s a i b . e r u t a r e p m e t r e v o y t i l i b a t s s a i b c d s e d i v o r p rf in rf out 1 uf c b c b c d v s r bias l c 1 2 3 4 1000 pf SGA5586Z 1 uf r bias a55 1000 pf c b c b c d l c v s mounting instructions 1. use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. we recommend 1 or 2 ounce copper. measurements for this data sheet were made on a 31 mil thick fr-4 board with 1 ounce copper on both sides.
5 of 6 ds100916 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA5586Z suggested pad layout package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances.
6 of 6 ds100916 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA5586Z part identification ordering information ordering code description SGA5586Z 13" reel with 3000 pieces SGA5586Zsq sample bag with 25 pieces SGA5586Zsr 7? reel with 100 pieces SGA5586Zpck1 850mhz, 8v operation pcba with 5-piece sample bag 55z
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